FAR-INFRARED EXCITATIONS IN ANTIDOT SYSTEMS ON SILICON MOS STRUCTURES

被引：4

作者：

HUBER, A ^{[1
]}

JEJINA, I ^{[1
]}

LORENZ, H ^{[1
]}

KOTTHAUS, JP ^{[1
]}

BAKKER, S ^{[1
]}

KLAPWIJK, TM ^{[1
]}

机构：

[1] UNIV GRONINGEN,DEPT APPL PHYS,9747 AG GRONINGEN,NETHERLANDS

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 03期

关键词：

D O I：

10.1088/0268-1242/10/3/022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on far-infrared transmission measurements of an antidot superlattice in a stacked-gate silicon MOS device. The electrons in this antidot system are electrostatically confined below the metallic mesh of the bottom gate. Sweeping the top gate voltage allows to tune the electron system from a two-dimensional electron system to an antidot superlattice. The observed magnetic field dispersion of the electronic oscillations is in good agreement with a recently developed classical theory.

引用

页码：365 / 368

页数：4

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