SPECTRAL GAIN MEASUREMENTS FOR SEMICONDUCTOR-LASER DIODES

被引:11
作者
CHO, LALS
SMOWTON, PM
THOMAS, B
机构
来源
IEE PROCEEDINGS-J OPTOELECTRONICS | 1990年 / 137卷 / 01期
关键词
D O I
10.1049/ip-j.1990.0013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spectral gain studies were carried out for two different laser diode structures from the recordings of Fabry-Perot modes. The Cassidy method was found to be superior to other methods for determining gain and for application even at laser threshold. Maximum gain versus current values were derived for both AlGaAs/GaAs and InGaAsP/InP lasers, and showed good agreement with published theoretical values.
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收藏
页码:64 / 68
页数:5
相关论文
共 9 条
[1]   TECHNIQUE FOR MEASUREMENT OF THE GAIN SPECTRA OF SEMICONDUCTOR DIODE-LASERS [J].
CASSIDY, DT .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) :3096-3099
[2]  
DUTTA DK, 1980, J APPL PHYS, V51, P6095
[3]   GAIN-CURRENT RELATION FOR INO.72GAO.28ASO.6PO.4 LASERS [J].
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :55-60
[4]  
GARRETT B, 1986, IEE C MULTIQUANTUM W
[5]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[6]   ABSORPTION, EMISSION, AND GAIN SPECTRA OF 1.3-MU-M INGAASP QUATERNARY LASERS [J].
HENRY, CH ;
LOGAN, RA ;
TEMKIN, H ;
MERRITT, FR .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :941-946
[7]   ULTIMATE LIMIT IN LOW THRESHOLD QUANTUM WELL GAALAS SEMICONDUCTOR-LASERS [J].
LAU, KY ;
DERRY, PL ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :88-90
[8]  
MENGEL F, 1978, THESIS
[9]   MEASUREMENTS OF DG/DN AND DN/DN AND THEIR DEPENDENCE ON PHOTON ENERGY IN LAMBDA = 1.5 MU-M INGAASP LASER-DIODES [J].
WESTBROOK, LD .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1986, 133 (02) :135-142