ELECTRONIC TRANSPORT INVESTIGATION OF ARSENIC-IMPLANTED SILICON .1. ANNEALING INFLUENCE ON THE TRANSPORT-COEFFICIENTS

被引：11

作者：

CHRISTOFIDES, C ^{[1
]}

JAOUEN, H ^{[1
]}

GHIBAUDO, G ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT,PHYS COMPOSANTS SEMICOND LAB,CNRS,UNITE 840,F-38031 GRENOBLE,FRANCE

来源：

关键词：

D O I：

10.1063/1.343194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4832 / 4839

页数：8

共 39 条

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