ELECTRONIC TRANSPORT INVESTIGATION OF ARSENIC-IMPLANTED SILICON .1. ANNEALING INFLUENCE ON THE TRANSPORT-COEFFICIENTS

被引：11

作者：

CHRISTOFIDES, C ^{[1
]}

JAOUEN, H ^{[1
]}

GHIBAUDO, G ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTR & RADIOELECT,PHYS COMPOSANTS SEMICOND LAB,CNRS,UNITE 840,F-38031 GRENOBLE,FRANCE

来源：

关键词：

D O I：

10.1063/1.343194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4832 / 4839

页数：8

共 39 条

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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 425 - 428
[14] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385
[15] KIREEV PS, 1975, PHYSICS SEMICONDUCTO
[16] PERCOLATION AND CONDUCTION
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[17] CLASSICAL TRANSPORT IN DISORDERED MEDIA - SCALING AND EFFECTIVE-MEDIUM THEORIES
KIRKPATRICK, S
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (25) : 1722 - +
[18] KRAKOW W, 1981, DEFECTS SEMICONDUCTO, V2, P185
[19] LINDHARD J, 1965, MAT FYS MEDD DAN VID, V34, P14
[20] FREQUENCY-DEPENDENT LOSS IN AMORPHOUS-SEMICONDUCTORS
LONG, AR
[J]. ADVANCES IN PHYSICS, 1982, 31 (05) : 553 - 637