ULTRAFAST RELAXATION OF PHOTOEXCITED HOLES IN N-DOPED III-V COMPOUNDS STUDIED BY FEMTOSECOND LUMINESCENCE

被引：60

作者：

ZHOU, XQ ^{[1
]}

LEO, K ^{[1
]}

KURZ, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST SEMICOND ELECTR,W-5100 AACHEN,GERMANY

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3886

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present time-resolved measurements of the relaxation of photoexcited holes in n-doped GaAs and InP with 100 fs time resolution. The band-edge luminescence is predominantly controlled by the hole dynamics, when the optical excitation density is much lower than the doping density. Information on the electron-hole scattering and hole-phonon scattering rates is obtained by varying the doping density. Thermal equilibrium between hot holes and lattice is found to be established on a subpicosecond time scale. The energy-loss rate of holes is dominated by optical-deformation-potential scattering.

引用

页码：3886 / 3889

页数：4

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