AN AUGER-ELECTRON SPECTROSCOPY STUDY OF THE SPUTTERING AND ROOM-TEMPERATURE OXIDATION OF TERBIUM AND TERBIUM SILICIDE

被引:12
作者
BERNING, GLP
SWART, HC
DEWITT, B
机构
[1] Department of Physics, University of the Orange Free State, ZA-9300 Bloemfontein
关键词
D O I
10.1016/0169-4332(93)90016-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The oxidation of the TbSi1.7 surface after 2 keV Ar+ ion bombardment and the effect of different energy (0.7, 2 and 4 keV) Ar+ ions on the composition of a TbSi1.7 surface have been monitored by Auger electron spectroscopy. During Ar+ ion bombardment of TbSi1.7 the surface was enriched by Si. The degree of Si enrichment on the surface depends on the energy of the Ar+ ions. During the room-temperature oxidation of TbSi1.7 in the vacuum system Th segregates to the surface where it oxidizes. When TbSi1.7 is exposed to wet oxygen at air pressure and 950-degrees-C mainly terbium oxide is formed on the surface.
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页码:1 / 7
页数:7
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