IONIZING-RADIATION EFFECTS ON POWER MOSFETS DURING HIGH-SPEED SWITCHING

被引：17

作者：

BLACKBURN, DL ^{[1
]}

BERNING, DW ^{[1
]}

BENEDETTO, JM ^{[1
]}

GALLOWAY, KF ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/TNS.1982.4336403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1555 / 1558

页数：4

相关论文

共 11 条

[1] DOSE-RATE TOLERANT HEXFET POWER-SUPPLY
ABARE, WE
MARTINDALE, WK
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4380 - 4383
[2] BAKER WE, 1980, P POWERCON, V7
[3] VDMOS POWER TRANSISTOR DRAIN-SOURCE RESISTANCE RADIATION DEPENDENCE
BLACKBURN, DL
ROBBINS, TC
GALLOWAY, KF
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4354 - 4359
[4] MODELING OF IRRADIATION-INDUCED CHANGES IN THE ELECTRICAL-PROPERTIES OF METAL-OXIDE SEMICONDUCTOR STRUCTURES
CHURCHILL, JN
HOLMSTROM, FE
COLLINS, TW
[J]. ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, 1982, 58 : 1 - 79
[5] THE EFFECTS OF TEST CONDITIONS ON MOS RADIATION-HARDNESS RESULTS
DRESSENDORFER, PV
SODEN, JM
HARRINGTON, JJ
NORDSTROM, TV
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4281 - 4287
[6] Hower P. L., 1981, PowerConversion International, V7, P45
[7] DYE FILM DOSIMETRY FOR RADIATION PROCESSING
HUMPHREYS, JC
MCLAUGHLIN, WL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (02) : 1797 - 1801
[8] ADDITIONAL POWER VMOS RADIATION EFFECTS STUDIES
RATTNER, S
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (04) : 1329 - 1331
[9] SEEHRA SS, 1982 IEEE NUCL SPAC
[10] VOLMERANGE H, 1982 IEEE NUCL SPAC