THE ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS

被引：3

作者：

CARTER, G

ELLIMAN, RG

机构：

来源：

RADIATION EFFECTS LETTERS | 1983年 / 68卷 / 05期

关键词：

D O I：

10.1080/01422448308226425

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：155 / 161

页数：7

共 14 条

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WEBB, R
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[3] FLUENCE DEPENDENCE OF DISORDER DEPTH PROFILES IN PB IMPLANTED SI
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[4] DENNIS JR, 1978, J APPL PHYS, V49, P119
[5] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &
[6] MOREHEAD FF, 1970, RADIAT EFF, V6, P25
[7] Swanson M.L., 1971, RAD EFFECTS SEMICOND, V1st ed., P359
[8] SWANSON ML, 1982, NUCL INSTRUM METHODS, V194, P165, DOI 10.1016/0029-554X(82)90510-9
[9] ENERGY SPIKES IN SI AND GE DUE TO HEAVY-ION BOMBARDMENT
THOMPSON, DA
WALKER, RS
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2): : 91 - 100
[10] DISORDER PRODUCTION AND AMORPHIZATION IN ION-IMPLANTED SILICON
THOMPSON, DA
GOLANSKI, A
HAUGEN, KH
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CARTER, G
CHRISTODOULIDES, CE
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (1-2): : 69 - 84