REDUCTION OF CRYSTAL DEFECTS IN ACTIVE LAYERS OF GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS FOR LONG-LIFE OPERATION

被引:9
作者
ISHII, M
KAN, H
SUSAKI, W
NISHIURA, H
OGATA, Y
机构
[1] MITUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
[2] MITUBISHI ELECT CORP,CENT RES LAB,AMAGASAKI,HYOGO,JAPAN
关键词
D O I
10.1109/JQE.1977.1069425
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:600 / 604
页数:5
相关论文
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