TRANSPORT-PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES

被引：3

作者：

WEIMANN, G

机构：

来源：

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1986年 / 26卷

关键词：

D O I：

10.1007/BFb0107799

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：231 / 250

页数：20

共 30 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) :3900-3907

[2] GROWTH CONDITION INDEPENDENCE OBSERVED FOR DX CENTER IN SI-DOPED ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ASHIZAWA, Y ;

WATANABE, MO .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11) :L883-L884

[3]

BABA J, 1984, JAP J APPL PHYS, V23, pL654

[4] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].

BATEY, J ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209

[5] OPTIMIZATION OF MODULATION-DOPED HETEROSTRUCTURES FOR TEGFET OPERATION AT ROOM-TEMPERATURE [J].

DAMBKES, H ;

BROCKERHOFF, W ;

HEIME, K ;

PLOOG, K ;

WEIMANN, G ;

SCHLAPP, W .

ELECTRONICS LETTERS, 1984, 20 (15) :615-618

[6]

DELECLUSE P, 1982, ELECTRON LETT, V17, P344

[7] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386

[8]

FRITZSCHE D, IN PRESS

[9]

FRITZSCHE D, 1985, 15TH EUR SOL STAT DE

[10]

HARRIS JJ, 1985, TECHNOLOGY PHYSICS M, P425

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