PLASTIC STRESS-RELAXATION IN HIGHLY STRAINED IN0.30GA0.70AS/GAAS STRUCTURES

被引：17

作者：

ANDROUSSI, Y

LEFEBVRE, A

DELAMARRE, C

WANG, LP

DUBON, A

COURBOULES, B

DEPARIS, C

MASSIES, J

机构：

[1] ECOLE SUPER PHYS & CHIM IND VILLE PARIS,PHYS SOLIDE LAB,CNRS,UPR 5,F-75231 PARIS 05,FRANCE

[2] CNRS,CTR RECH HETEROEPITAXIE & APPLICAT,F-06560 VALBONNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

D O I：

10.1063/1.113384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution of surface roughness and the subsequent plastic relaxation mechanisms have been studied by transmission electron microscopy (TEM) as a function of the thickness of highly strained In0.30Ga 0.70As layers on GaAs(001). The following stages have been observed: formation of coherent islands, coalescence of islands, and nucleation of dislocations at the troughs of the surface ripples. Dislocations are thus systematically generated where the highest stress concentrations are expected, according to recent theoretical predictions. It is the first time such a plastic relaxation mechanism has been observed in highly strained semiconductor heterostructures.© 1995 American Institute of Physics.

引用

页码：3450 / 3452

页数：3

共 27 条

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