ENCAPSULATION OF ION-IMPLANTED GAAS USING NATIVE OXIDES

被引：6

作者：

SEALY, BJ ^{[1
]}

DCRUZ, ADE ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

ELECTRONICS LETTERS | 1975年 / 11卷 / 15期

关键词：

D O I：

10.1049/el:19750247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：323 / 324

页数：2

共 12 条

[1]

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[2]

Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802

[3]

BELL EG, TO BE PUBLISHED

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MAYER, JW ;

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RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[5] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[6]

HEMMENT PLF, 1974, P C ION IMPLANTATION

[7] CALCULATIONS OF POINT DEFECT CONCENTRATIONS AND NONSTOICHIOMETRY IN GAAS [J].

LOGAN, RM ;

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1739-&

[8]

MIYAZAKI T, 1974, P C ION IMPLANTATION

[9] STRUCTURE AND COMPOSITION OF NATIVE OXIDES ON GAAS [J].

SEALY, BJ ;

HEMMENT, PLF .

THIN SOLID FILMS, 1974, 22 (03) :S39-S43

[10] NEW THIN-FILM ENCAPSULANT FOR ION-IMPLANTED GAAS [J].

SEALY, BJ ;

SURRIDGE, RK .

THIN SOLID FILMS, 1975, 26 (02) :L19-L22

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