DEPENDENCE OF GRAIN-SIZE ON THE SUBSTRATE-TEMPERATURE OF SI AND GE FILMS PREPARED BY EVAPORATION UNDER ULTRAHIGH-VACUUM

被引：18

作者：

TSU, R

GONZALEZHERNANDEZ, J

CHAO, SS

MARTIN, D

机构：

[1] INST FIS & QUIM SAO CARLOS,BR-13560 SAO CARLOS,SP,BRAZIL

[2] ENERGY CONVERS DEVICES INC,TROY,MI 48084

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.96732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：647 / 649

页数：3

共 9 条

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[5] WIDE-RANGE CONTROL OF CRYSTALLITE SIZE AND ITS ORIENTATION IN GLOW-DISCHARGE DEPOSITED MU-C-SI-H [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :995-998

[7] EFFECT OF SUBSTRATE BIAS ON THE PROPERTIES OF MICROCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE [J].

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VEPREK, S .

SOLID STATE COMMUNICATIONS, 1982, 42 (06) :465-468

[8]

SCHEVCHIK NJ, 1974, J NONCRYST SOLIDS, V16, P55

[9]

TSU R, 1985, P MATER RES SOC, V38, P383

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