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ATOM-RESOLVED SURFACE-CHEMISTRY STUDIED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY
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PHYSICAL REVIEW B,
1989, 39 (08)
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DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY
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PHYSICAL REVIEW B,
1989, 39 (03)
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CHARGE-TRANSFER AND ASYMMETRY ON GE(111)-C(2X8) STUDIED BY SCANNING TUNNELING MICROSCOPY
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PHYSICAL REVIEW B,
1991, 44 (03)
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2 REACTION CHANNELS DIRECTLY OBSERVED FOR ATOMIC-HYDROGEN ON THE SI(111)-7X7 SURFACE
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PHYSICAL REVIEW B,
1991, 43 (02)
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