ELECTRONIC BAND-STRUCTURE AND NONPARABOLICITY IN STRAINED-LAYER SI-SI1-XGEX SUPERLATTICES

被引：9

作者：

TURTON, RJ

JAROS, M

MORRISON, I

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.38.8397

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：8397 / 8405

页数：9

相关论文

共 13 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES
ABSTREITER, G
BRUGGER, H
WOLF, T
JORKE, H
HERZOG, HJ
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444
[2] [Anonymous], 1966, SEMICONDUCTORS SEMIM
[3] STRAIN-INDUCED CONDUCTION-BAND NONPARABOLICITY OF GAAS-GAAS1-XPX SUPERLATTICES
BROWN, LDL
JAROS, M
[J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4306 - 4309
[4] MOMENTUM-MIXING-INDUCED ENHANCEMENT OF BAND NONPARABOLICITY IN GAAS-GA1-XALXAS SUPERLATTICES
BROWN, LDL
JAROS, M
NINNO, D
[J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2935 - 2937
[5] ELECTRONIC-STRUCTURE OF GAAS-GA1-XALXAS QUANTUM WELL AND SAWTOOTH SUPERLATTICES
JAROS, M
WONG, KB
GELL, MA
[J]. PHYSICAL REVIEW B, 1985, 31 (02): : 1205 - 1207
[6] STRAIN-INDUCED ELECTRON-STATES IN SI0.75GE0.25(SI/SI0.5GE0.5) (001) SUPERLATTICES
MORRISON, I
JAROS, M
WONG, KB
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (12): : L239 - L245
[7] ELECTRONIC AND OPTICAL-PROPERTIES OF ULTRATHIN SI/GE(001) SUPERLATTICES
MORRISON, I
JAROS, M
[J]. PHYSICAL REVIEW B, 1988, 37 (02): : 916 - 921
[8] STRAIN-INDUCED CONFINEMENT IN SI0.75GE0.25 (SI/SI0.5GE0.5) (001) SUPERLATTICE SYSTEMS
MORRISON, I
JAROS, M
WONG, KB
[J]. PHYSICAL REVIEW B, 1987, 35 (18): : 9693 - 9707
[9] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS
OSBOURN, GC
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1586 - 1589
[10] INDIRECT BAND-GAP OF COHERENTLY STRAINED GEXSI1-X BULK ALLOYS ON (001) SILICON SUBSTRATES
PEOPLE, R
[J]. PHYSICAL REVIEW B, 1985, 32 (02): : 1405 - 1408