FILM-EDGE-INDUCED DISLOCATION GENERATION IN SILICON SUBSTRATES .1. THEORETICAL-MODEL

被引：70

作者：

VANHELLEMONT, J ^{[1
]}

AMELINCKX, S ^{[1
]}

CLAEYS, C ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR,B-3030 HEVERLEE,BELGIUM

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.337977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2170 / 2175

页数：6

相关论文

共 19 条

[1] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES
BRANTLEY, WA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535
[2] INDENTATION ROSETTES AND DISLOCATION LOCKING BY OXYGEN IN SILICON
HARADA, H
SUMINO, K
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4838 - 4842
[3] HAYAFUJI Y, 1977, SEMICONDUCTOR SILICO, P750
[4] FILM-EDGE-INDUCED STRESS IN SILICON SUBSTRATES
HU, SM
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 5 - 7
[5] DISLOCATION PROPAGATION AND EMITTER EDGE DEFECTS IN SILICON WAFERS
HU, SM
KLEPNER, SP
SCHWENKER, RO
SETO, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4098 - 4106
[6] METHOD FOR FINDING CRITICAL STRESSES OF DISLOCATION MOVEMENT
HU, SM
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 139 - 141
[7] KOLBESEN BO, 1981, I PHYS C SER, V57, P21
[8] KONDO Y, 1981, SEMICONDUCTOR SILICO, P220
[9] Kosevich A. M., 1979, Dislocations in solids, vol.1. The elastic theory, P33
[10] KOVACS I, 1973, INT SERIES MONOGRAPH, V60