FORMATION OF OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF EVAPORATED AND ION-IMPLANTED GE FILMS

被引：2

作者：

FUKADA, T

ASANO, T

FRUKAWA, S

ISHIWARA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 01期

关键词：

D O I：

10.1143/JJAP.26.117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：117 / 121

页数：5

共 8 条

[1] SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J].

CHRISTOU, A .

SOLID-STATE ELECTRONICS, 1979, 22 (02) :141-&

[2]

Gibbs Jack P., 1975, PROJECTED RANGE STAT, P5

[3] EPITAXY OF GERMANIUM FILMS ON GALLIUM ARSENIDE BY VACUUM EVAPORATION [J].

LEVER, RF ;

HUMINSKI, EJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3638-&

[4]

MILNES AG, 1972, HETEROJUNCTION METAL, P4

[5] SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS [J].

PALMSTROM, CJ ;

GALVIN, GJ .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :815-817

[6] OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS - A REVIEW OF FABRICATION TECHNIQUES [J].

PIOTROWSKA, A ;

GUIVARCH, A ;

PELOUS, G .

SOLID-STATE ELECTRONICS, 1983, 26 (03) :179-&

[7] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

STALL, RA ;

WOOD, CEC ;

BOARD, K ;

DANDEKAR, N ;

EASTMAN, LF ;

DEVLIN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4062-4069

[8] ION-BEAM MIXING OF PT GAAS AND FORMATION OF OHMIC CONTACTS [J].

TSUTSUI, K ;

FURUKAWA, S .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :560-562

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