INTERFACE EFFECTS ON ELECTRICAL-PROPERTIES OF HIGH-PURITY INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：11

作者：

RAKENNUS, K

TAPPURA, K

HAKKARAINEN, T

ASONEN, H

LAIHO, R

ROLFE, SJ

DUBOWSKI, JJ

机构：

[1] UNIV TURKU,WIHURI PHYS LAB,SF-20500 TURKU 50,FINLAND

[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 110卷 / 04期

关键词：

D O I：

10.1016/0022-0248(91)90648-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of the substrate-epilayer interface of InP on Hall mobilities and carrier concentrations at 300 and 77 K is studied. It is shown that photoluminescence (PL) and Hall results are contradictory due to the highly conductive interface of InP, which falsifies the Hall results. After correcting mathematically for the interface effect in the Hall results, PL and Hall data show that our InP layers are of high purity and only slightly compensated. The SIMS profiles reveal an accumulation of carbon and silicon at the interface.

引用

收藏

页码：910 / 914

页数：5

相关论文

共 18 条

[1] HIGH-QUALITY EPITAXIAL INDIUM-PHOSPHIDE AND INDIUM ALLOYS GROWN USING TRIMETHYLINDIUM AND PHOSPHINE IN AN ATMOSPHERIC-PRESSURE REACTOR [J].

BASS, SJ ;

YOUNG, ML .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :311-318

[2] HIGH-TEMPERATURE MOBILITY OF PURE N-TYPE INP EPITAXIAL LAYERS [J].

BENZAQUEN, M ;

WALSH, D ;

MAZURUK, K .

PHYSICAL REVIEW B, 1987, 36 (08) :4388-4393

[3] EVIDENCE FOR DEEP CENTERS IN N-INP GROWN BY MOVPE [J].

BENZAQUEN, M ;

WALSH, D ;

BEAUDOIN, M ;

MAZURUK, K ;

PUETZ, N .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :562-568

[4] DETERMINATION OF DONOR AND ACCEPTOR IMPURITY CONCENTRATIONS IN N-INP AND N-GAAS [J].

BENZAQUEN, M ;

MAZURUK, K ;

WALSH, D ;

SPRINGTHORPE, AJ ;

MINER, C .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (02) :111-117

[5]

BOUD JM, 1988, I PHYS C SER, V91, pCH8

[6] GROWTH OF ULTRAPURE INP BY ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CHEN, CH ;

KITAMURA, M ;

COHEN, RM ;

STRINGFELLOW, GB .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :963-965

[7] GROWTH OF ULTRAPURE AND SI-DOPED INP BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DIFORTEPOISSON, MA ;

BRYLINSKI, C ;

DUCHEMIN, JP .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :476-478

[8] GROWTH OF HIGH-PURITY INP BY METALORGANIC MBE (CBE) [J].

HEINECKE, H ;

BAUR, B ;

HOGER, R ;

MIKLIS, A .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :143-148

[9] CARRIER COMPENSATION AT INTERFACES FORMED BY MOLECULAR-BEAM EPITAXY [J].

KAWAI, NJ ;

WOOD, CEC ;

EASTMAN, LF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6208-6213

[10] HIGH-PURITY INP GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY (GSMBE) [J].

LAMBERT, M ;

PERALES, A ;

VERGNAUD, R ;

STARCK, C .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :97-100