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USE OF SECONDARY MOLECULAR-IONS IN CS-SIMS ELEMENTAL ANALYSIS

被引：17
作者：
GAO, Y
机构：
来源：
SURFACE AND INTERFACE ANALYSIS | 1989年 / 14卷 / 09期
关键词：
D O I：
10.1002/sia.740140910
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：552 / 554
页数：3
相关论文
共 6 条
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[2]  
NEWMAN JG, 1988, SIMS, V6, P63
[3]   QUANTITATIVE-ANALYSIS AND DEPTH PROFILING OF RARE-GASES IN SOLIDS BY SECONDARY-ION MASS-SPECTROMETRY - DETECTION OF (CSR)+ MOLECULAR-IONS (R = RARE-GAS) [J].
RAY, MA ;
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GREENE, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (01) :44-50
[4]  
STEVIE FA, 1988, SECONDARY ION MASS S, V6, P319
[5]   EVALUATION OF A CESIUM POSITIVE-ION SOURCE FOR SECONDARY ION MASS-SPECTROMETRY [J].
STORMS, HA ;
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STEIN, JD .
ANALYTICAL CHEMISTRY, 1977, 49 (13) :2023-2030
[6]   HIGH-SENSITIVITY DEPTH PROFILING OF ARSENIC AND PHOSPHORUS IN SILICON BY MEANS OF SIMS [J].
WITTMAACK, K .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :552-554
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