EXPERIMENTAL INVESTIGATION OF EXCESS CHARGE AND TIME CONSTANT OF MINORITY-CARRIERS IN THIN DIFFUSED LAYER OF 0.1 OHM-CM SILICON SOLAR-CELLS

被引：2

作者：

GODLEWSKI, MP

BRANDHORST, HW

LINDHOLM, FA

SAH, CT

机构：

[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

[2] UNIV FLORIDA,GAINESVILLE,FL 32601

[3] UNIV ILLINOIS,URBANA,IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 03期

关键词：

D O I：

10.1007/BF02660493

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：373 / 382

页数：10

共 9 条

[1] DETERMINATION OF BULK CARRIER LIFETIME IN LOW-DOPED REGION OF A SILICON POWER DIODE, BY METHOD OF OPEN CIRCUIT VOLTAGE DECAY [J].

BASSETT, RJ ;

FULOP, W ;

HOGARTH, CA .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (02) :177-192

[2]

BRANDHORST HW, 1972, 9TH P IEEE PHOT SPEC, P37

[3]

Godlewski M. P., 1975, 11th IEEE Photovoltaic Specialists Conference, P32

[4]

LAMNECK JH, 1969, X1894 NASA TM

[5] MEASUREMENT OF MINORITY CARRIER LIFETIME AND SURFACE EFFECTS IN JUNCTION DEVICES [J].

LEDERHANDLER, SR ;

GIACOLETTO, LJ .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (04) :477-483

[6]

Lindholm F. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P3

[7] NORMAL MODES OF SEMICONDUCTOR P-N-JUNCTION DEVICES FOR MATERIAL-PARAMETER DETERMINATION [J].

LINDHOLM, FA ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4203-4205

[8]

LINDHOLM FA, 1976, 12TH IEEE PHOT SPEC

[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS [J].

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03) :435-489

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