ELECTRICAL-PROPERTIES AND THEIR DEPTH VARIATION IN POLY-SI UNDER AM1 ILLUMINATION

被引：8

作者：

CHEN, Z

BURTON, LC

机构：

[1] Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 122卷 / 01期

关键词：

D O I：

10.1002/pssa.2211220135

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New relations for the polysilicon grain boundary (GB) potential barrier height (U(g)) for both, the dark and light cases, are developed. The dependency of U(g) on doping concentration (N), photogeneration (G), trap density (N(ts)), and the depth from surface (x), are discussed theoretically, along with the resulting minority carrier lifetime (tau), mobility (mu), and diffusion length (L). It is shown that V(g) increases with depth and trap density, whereas the transport parameters decrease drastically under air-mass number 1 (AM1) illumination.

引用

页码：361 / 370

页数：10

共 22 条

[11] CARRIER RECOMBINATION AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON UNDER OPTICAL ILLUMINATION [J].