AN IGFET INVERSION CHARGE MODEL FOR VLSI SYSTEMS

被引：8

作者：

LEWYN, LL ^{[1
]}

MEINDL, JD ^{[1
]}

机构：

[1] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：434 / 440

页数：7

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