ACCEPTOR EXCITED-STATES IN GALLIUM-ARSENIDE ON SILICON

被引：4

作者：

FREUNDLICH, A

NEU, G

GRENET, JC

机构：

[1] Laboratoire de Physique du Solide et Energie Solaire, CNRS, 06560 Valbonne, rue B. Grégory

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 76卷 / 02期

关键词：

D O I：

10.1016/0038-1098(90)90518-G

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Excited and ground states of carbon, silicon and germanium acceptor impurities in GaAs on Si are studied using selective donor-acceptor pair luminescence (SPL) and photoluminescence excitation. Acceptor spectroscopy in such a biaxially strained material is shown to be possible and a good agreement between the experimental observation and a theoretical approach based on effective mass calculations is obtained for the ground state. Ground-to-excited-state 1S 3 2-2S 3 2 transitions of C, Si and Ge were observed for the first time. A noticeable binding energy reduction of these excited states is evidenced. © 1990.

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页码：87 / 92

页数：6

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