BAND-EDGE EXCITONS IN GALLIUM-ARSENIDE ON SILICON

被引：23

作者：

FREUNDLICH, A

KAMADA, H

NEU, G

GIL, B

机构：

[1] UNIV MONTPELLIER 2, ETUD SEMICOND GRP, F-34060 MONTPELLIER, FRANCE

[2] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LAB, ATSUGI, KANAGAWA 24301, JAPAN

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.40.1652

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1652 / 1656

页数：5

共 28 条

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