EFFICIENCY OF RADIATION DEFECT FORMATION IN SILICON AT VARIOUS INTENSITIES OF ELECTRON AND GAMMA-RAY IRRADIATION

被引：12

作者：

LUGAKOV, PF

LUKYANITSA, VV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 83卷 / 02期

关键词：

D O I：

10.1002/pssa.2210830213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：521 / 528

页数：8

共 23 条

[1]

Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

[2]

FAN HY, 1971, RAD EFF, V8, P279

[3]

GREGORY BL, 1968, RADIATION EFFECTS SE, P124

[4] ELECTRON BOMBARDMENT OF SILICON [J].

HILL, DE .

PHYSICAL REVIEW, 1959, 114 (06) :1414-1420

[5] THE EFFECT OF DISLOCATIONS ON THE RADIATION DEFECT ANNEALING PROCESSES IN SILICON [J].

KAZAKEVICH, LA ;

LUGAKOV, PF .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01) :113-122

[6]

KOZLOV IP, 1974, FIZ TEKH POLUPROV, V8, P1431

[7]

Kuznetsov V. I., 1979, FIZ TEKH POLUPROV, V13, P625

[8] EPR OF A CARBON-OXYGEN-DIVACANCY COMPLEX IN IRRADIATED SILICON [J].

LEE, YH ;

CORBETT, JW ;

BROWER, KL .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 41 (02) :637-647

[9] CARBON INTERSTITIAL IN ELECTRON-IRRADIATED SILICON [J].

LEE, YH ;

CHENG, LJ ;

GERSON, JD ;

MOONEY, PM ;

CORBETT, JW .

SOLID STATE COMMUNICATIONS, 1977, 21 (01) :109-111

[10]

Lugakov P. F., 1979, FIZ TEKH POLUPROV, V13, P401

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