PHOTOLUMINESCENCE STUDIES OF SIDEWALL PROPERTIES OF DRY-ETCHED INGAAS/INP QUANTUM WIRES

被引：12

作者：

GU, SQ

LIU, X

COVINGTON, M

REUTER, E

CHANG, H

PANEPUCCI, R

ADESIDA, I

BISHOP, SG

CANEAU, C

BHAT, R

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.356549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaAs/InP quantum wires with widths ranging from 200 to 40 nm have been fabricated using high-resolution electron-beam lithography and CH4/H-2 reactive-ion etching. The excitation intensity dependence of the photoluminescence (PL) energies and line shapes for relatively wide wires (approximately 100 nm) exhibits the effects of band filling in k space and band-gap renormalization due to many-body effects in dense electron-hole plasmas (EHP). In the narrowest wires studied (approximately 40 nm), the effects of sidewall surface recombination limit the attainable EHP density. In addition, the results show a blue shift of PL energies when wire width decreases below 100 nm.

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页码：8071 / 8074

页数：4

相关论文

共 15 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] SPONTANEOUS EMISSION CHARACTERISTICS OF QUANTUM WELL LASERS IN STRONG MAGNETIC-FIELDS - AN APPROACH TO QUANTUM-WELL-BOX LIGHT-SOURCE [J].

ARAKAWA, Y ;

SAKAKI, H ;

NISHIOKA, M ;

OKAMOTO, H ;

MIURA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L804-L806

[3] TRANSPORT AND OPTICAL-PROPERTIES OF SEMICONDUCTOR QUANTUM WIRES [J].

FORCHEL, A ;

MENSCHIG, A ;

MAILE, BE ;

LEIER, H ;

GERMANN, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :444-450

[4] LATERAL QUANTIZATION IN THE OPTICAL-EMISSION OF BARRIER-MODULATED WIRES [J].

GREUS, C ;

BUTOV, L ;

DAIMINGER, F ;

FORCHEL, A ;

KNIPP, PA ;

REINECKE, TL .

PHYSICAL REVIEW B, 1993, 47 (12) :7626-7629

[5] REEVALUATION OF BLUESHIFTS INTRODUCED BY LATERAL CONFINEMENT IN QUANTUM-WELL WIRE STRUCTURES [J].

GUSTAFSSON, A ;

LIU, X ;

MAXIMOV, I ;

SAMUELSON, L ;

SEIFERT, W .

APPLIED PHYSICS LETTERS, 1993, 62 (15) :1709-1711

[6] SPATIALLY DIRECT AND INDIRECT OPTICAL-TRANSITIONS IN SHALLOW ETCHED GAAS/ALGAAS WIRES, DOTS AND ANTIDOTS [J].

HIRLER, F ;

STRENZ, R ;

KUCHLER, R ;

ABSTREITER, G ;

BOHM, G ;

SMOLINER, J ;

TRANKLE, G ;

WEIMANN, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (04) :617-621

[7] COMPARISON OF THE SIDEWALL RECOMBINATION IN DRY AND WET ETCHED INGAAS/INP WIRES [J].

JACOBS, B ;

ZULL, H ;

FORCHEL, A ;

GYURO, I ;

SPEIER, P ;

ZIELINSKI, E .

MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) :401-404

[8] PHOTO-LUMINESCENCE STUDY OF ELECTRON-HOLE RECOMBINATION ACROSS THE TUNABLE EFFECTIVE GAP IN GAAS N-I-P-I SUPER-LATTICES [J].

JUNG, H ;

DOHLER, GH ;

KUNZEL, H ;

PLOOG, K ;

RUDEN, P ;

STOLZ, HJ .

SOLID STATE COMMUNICATIONS, 1982, 43 (04) :291-294

[9]

KASH K, 1987, APPL PHY LETT, V55, P413

[10] BAND-GAP RENORMALIZATION AND BAND-FILLING EFFECTS IN A HOMOGENEOUS ELECTRON-HOLE PLASMA IN IN0.53GA0.47AS/INP SINGLE QUANTUM WELLS [J].

KULAKOVSKII, VD ;

LACH, E ;

FORCHEL, A ;

GRUTZMACHER, D .

PHYSICAL REVIEW B, 1989, 40 (11) :8087-8090