ION-BEAM EPITAXY OF SILICON FILMS IN AN ULTRAHIGH-VACUUM USING A SPUTTERING-TYPE METAL-ION SOURCE

被引：15

作者：

MATSUOKA, M

TOHNO, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.579415

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：305 / 313

页数：9

共 19 条

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