INELASTIC LIGHT-SCATTERING FROM HEAVILY DOPED AND HIGHLY COMPENSATED GAAS-SI

被引:21
作者
KAMIJOH, T
HASHIMOTO, A
TAKANO, H
SAKUTA, M
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D O I
10.1063/1.336338
中图分类号
O59 [应用物理学];
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页码:2382 / 2386
页数:5
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共 14 条
[1]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[2]  
Cardona M., 1980, Journal of the Physical Society of Japan, V49, P23
[3]   OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J].
EVANS, DJ ;
USHIODA, S .
PHYSICAL REVIEW B, 1974, 9 (04) :1638-1645
[4]   GROWTH OF THICK LIQUID-PHASE EPITAXIAL GAAS-SI LAYERS AND THEIR CHARACTERIZATION [J].
KACHARE, AH ;
SPITZER, WG ;
WHELAN, JM ;
NARAYANAN, GH .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :5022-5029
[5]   HEAT-TREATMENT OF SEMI-INSULATING INP-FE WITH PHOSPHOSILICATE GLASS ENCAPSULATION [J].
KAMIJOH, T ;
TAKANO, H ;
SAKUTA, M .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3756-3759
[6]   RAMAN-SCATTERING BY COUPLED LO PHONON-PLASMON MODE IN NORMAL-GAAS [J].
KATAYAMA, S ;
MURASE, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 42 (03) :886-894
[7]   RAMAN-SPECTRA FROM HEAT-TREATED SEMI-INSULATING GAAS [J].
NAKAMURA, T ;
USHIROKAWA, A ;
KATODA, T .
APPLIED PHYSICS LETTERS, 1981, 38 (01) :13-15
[8]   RAMAN-SCATTERING BY COUPLED LO-PHONON PLASMON MODES AND FORBIDDEN TO-PHONON RAMAN-SCATTERING IN HEAVILY DOPED P-TYPE GAAS [J].
OLEGO, D ;
CARDONA, M .
PHYSICAL REVIEW B, 1981, 24 (12) :7217-7232
[9]   INTRA-VALENCE-BAND AND INTER-VALENCE-BAND ELECTRONIC RAMAN-SCATTERING IN HEAVILY DOPED P-GAAS [J].
OLEGO, D ;
CARDONA, M ;
ROSSLER, U .
PHYSICAL REVIEW B, 1980, 22 (04) :1905-1911
[10]   SELF-ENERGY EFFECTS OF THE OPTICAL PHONONS OF HEAVILY DOPED P-GAAS AND P-GE [J].
OLEGO, D ;
CARDONA, M .
PHYSICAL REVIEW B, 1981, 23 (12) :6592-6602