MEASUREMENT OF THE MINORITY-CARRIER LIFETIME AND INJECTION EFFICIENCY IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：4

作者：

CHAND, N

FISCHER, R

HENDERSON, T

MORKOC, H

NEUGROSCHEL, A

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.96554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：367 / 369

页数：3

共 13 条

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[5]

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[7] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN [J].

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[8] DETERMINATION OF LIFETIMES AND RECOMBINATION CURRENTS IN P-N-JUNCTION SOLAR-CELLS, DIODES, AND TRANSISTORS [J].

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[9]

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[10] THE EFFECTS OF JUNCTION SHAPE AND SURFACE RECOMBINATION ON TRANSISTOR CURRENT GAIN .2. [J].

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