DETERMINATION OF THE MINORITY-CARRIER BASE LIFETIME OF JUNCTION TRANSISTORS BY MEASUREMENTS OF BASEWIDTH-MODULATION CONDUCTANCES

被引：16

作者：

BIRRITTELLA, MS ^{[1
]}

NEUGROSCHEL, A ^{[1
]}

LINDHOLM, FA ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 09期

关键词：

D O I：

10.1109/T-ED.1979.19607

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for determining the minority-carrier lifetime in the base of a bipolar transistor is described that involves measurement of the low-frequency, small-signal output conductance Go and reverse transconductance Gr, which arise from basewidth modulation. It involves also determining the base transit time either from calculations based on the base doping profile or from measurements at the transistor terminals. To illustrate the method, it is applied to transistors having considerably different base lifetimes. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1361 / 1363

页数：3

共 11 条

[1]

BIRRITTELLA MS, 1978, THESIS U FLORIDA

[2] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J].