PHOTOLUMINESCENCE STUDY FOR THERMAL-INDUCED AND IMPURITY-INDUCED ORDER-DISORDER TRANSFORMATIONS IN GA0.5IN0.5P EPILAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：3

作者：

HORNG, RH

HAUNG, LC

LEE, MK

机构：

[1] Institute of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1992年 / 32卷 / 01期

关键词：

D O I：

10.1016/0254-0584(92)90250-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal- and impurity-induced order-disorder transformations of Ga0.5In0.5P epilayers grown by metalorganic chemical vapor deposition have been investigated by photoluminescence. The energy gap splitting was observed during the transition from ordering to disordering. This is due to the variation of the valence-band spin-orbital split resulting from the interband reaction. The photoluminescence depth profile of the epilayer (incompletely transferred to disordering) is used to explain the phase transformation. A defect-associated order-disorder transformation model has been proposed.

引用

收藏

页码：73 / 76

页数：4

相关论文

共 12 条

[1] THE MORPHOLOGY OF ORDERED STRUCTURES IN III-V ALLOYS - INFERENCES FROM A TEM STUDY [J].

BAXTER, CS ;

STOBBS, WM ;

WILKIE, JH .

JOURNAL OF CRYSTAL GROWTH, 1991, 112 (2-3) :373-385

[2] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].

GOMYO, A ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

SUZUKI, T ;

YUASA, T .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373

[3] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY [J].

GOMYO, A ;

SUZUKI, T ;

KOBAYASHI, K ;

KAWATA, S ;

HINO, I ;

YUASA, T .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :673-675

[4] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].

GOMYO, A ;

SUZUKI, T ;

IIJIMA, S .

PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648

[5]

LEE MK, 1991, APPL PHYS LETT, V59

[6] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].

LONGINI, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :127-130

[7]

OBA Y, 1986, J CRYST GROWTH, V77, P374

[8] ENERGY LEVELS OF A DISORDERED ALLOY [J].

PARMENTER, RH .

PHYSICAL REVIEW, 1955, 97 (03) :587-598

[9] CALCULATION OF REGULAR SOLUTION INTERACTION PARAMETERS IN SEMICONDUCTOR SOLID-SOLUTIONS [J].

STRINGFELLOW, GB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1749-1750

[10] P-TYPE DOPING EFFECTS ON BAND-GAP ENERGY FOR GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

SUZUKI, T ;

GOMYO, A ;

HINO, I ;

KOBAYASHI, K ;

KAWATA, S ;

IIJIMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1549-L1552