BARRIER HEIGHT MODIFICATION OF METAL GERMANIUM SCHOTTKY DIODES

被引：16

作者：

HAN, CC ^{[1
]}

MARSHALL, ED ^{[1
]}

FANG, F ^{[1
]}

WANG, LC ^{[1
]}

LAU, SS ^{[1
]}

VOREADES, D ^{[1
]}

机构：

[1] HUGHES MICROELECTR CTR,CARLSBAD,CA 92008

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1662 / 1666

页数：5

共 9 条

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[3]

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[6]

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[7] A STUDY OF GE-GAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

STALL, RA ;

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DEVLIN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4062-4069

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH5

[9] BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER [J].

WU, CY .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4919-4922

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