GATE-CONTROLLED DIODE SO MEASUREMENT AND STEADY-STATE LATERAL CURRENT FLOW IN DEEPLY DEPLETED MOS STRUCTURES

被引：47

作者：

PIERRET, RF ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 12期

关键词：

D O I：

10.1016/0038-1101(74)90004-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1257 / 1269

页数：13

共 15 条

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[5] RADIATION-INDUCED INCREASE IN SURFACE RECOMBINATION VELOCITY OF THERMALLY OXIDIZED SILICON STRUCTURES
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[8] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
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[9] ON DEEPLY DEPLETED MOS CAPACITOR
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (05): : 842 - &
[10] EXPERIMENTAL DETERMINATION OF CARRIER LIFETIME NEAR SI-SIO2 INTERFACE
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[J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 221 - 227

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