THE SPREADING RESISTANCE OF MOSFETS

[1] SPREADING RESISTANCE IN SUB-MICRON MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) : 27 - 29

[2] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[3] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173

[4] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[5] Lepselter M. P., 1980, International Electron Devices Meeting. Technical Digest, P42

[6] CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) : 1022 - &

[7] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661

[8] SOURCE AND DRAIN RESISTANCE DETERMINATION FOR MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 479 - 481

[9] SMYTHE WR, 1968, STATIC DYNAMIC ELECT, P124

[10] Sze S.M., 1983, VLSI TECHNOLOGY, V2nd

[1] SPREADING RESISTANCE IN SUB-MICRON MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) : 27 - 29

[2] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[3] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J]. ELECTRON DEVICE LETTERS, 1980, 1 (09): : 170 - 173

[4] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[5] Lepselter M. P., 1980, International Electron Devices Meeting. Technical Digest, P42

[6] CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) : 1022 - &

[7] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661

[8] SOURCE AND DRAIN RESISTANCE DETERMINATION FOR MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 479 - 481

[9] SMYTHE WR, 1968, STATIC DYNAMIC ELECT, P124

[10] Sze S.M., 1983, VLSI TECHNOLOGY, V2nd