THICKNESS-DEPENDENT FREQUENCY-SHIFT IN INFRARED SPECTRAL ABSORBENCY OF SILICON-OXIDE FILM ON SILICON

被引：40

作者：

GUNDE, MK ^{[1
]}

ALEKSANDROV, B ^{[1
]}

机构：

[1] ISKRA MICROELECTR, LJUBLJANA, YUGOSLAVIA

来源：

APPLIED SPECTROSCOPY | 1990年 / 44卷 / 06期

关键词：

D O I：

10.1366/0003702904086722

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The spectral dependence of the refractive index n and extinction coefficient k of chemical-vapor-deposited (CVD) silicon oxide film on silicon wafer has been determined. The results are used to calculate spectral absorbances for 0.1-2 μm thick oxide films with unchanged structure. The dependence on thickness of the position of Si-O stretching (νM) has been investigated. The main factor influencing the frequency is the transmission factor at the air/film and film/substrate boundaries. In the limit of d → 0, νM corresponds to the maximum of the Im (ε) function.

引用

页码：970 / 974

页数：5

共 16 条

[1] RELATION BETWEEN SURFACE ROUGHNESS AND SPECULAR REFLECTANCE AT NORMAL INCIDENCE [J].