ATOMIC SCALE ANALYSES OF HF-TREATED SI(111) SURFACES BY STM

被引:19
作者
MORITA, Y
MIKI, K
TOKUMOTO, H
机构
[1] Electrotechnical Laboratory, Tsukuba, Ibaraki, 305, 1-1-4, Umezono
关键词
D O I
10.1016/0169-4332(92)90461-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Scanning tunneling microscopy (STM) has been applied to analyze Si(111) surfaces on atomic scale. Various microstructures are observed depending on surface treatment: the surface prepared by 1% HF dipping is usually rough and its flat terrace is occasionally terminated by trihydrides. The surface boiled in hot water following 1% HF dipping becomes less rough than that prepared by 1% HF dipping. The surface repeatedly boiled in hot water and 1% HF dipping becomes less rough than the former surfaces and there appear triangular-shaped holes surrounded by <112BAR> and <112BAR> directed steps. The surface treated by NH4F dipping becomes flat with completely triangular-shaped holes surrounded by only <112BAR> directed steps. These features can be explained by a two-step reaction between the surface and OH ions: the first step is a fast reaction of oxidation by insertion of the OH ions into surface Si bonds and the second is a slow reaction of removal by the OH ions of the oxidized parts. The anisotropic nature of the step edges is explained by a simple ball-and-stick model and the steric hindrance effect.
引用
收藏
页码:466 / 473
页数:8
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