LIGHT-INDUCED DEFECT STUDIES IN HYDROGENATED AMORPHOUS-SILICON BY EXOELECTRON EMISSION

被引：5

作者：

BHIDE, RS

MANORAMA, V

PAWAR, SK

BABRAS, S

BHORASKAR, SV

BHIDE, VG

机构：

[1] Department of Physics, University of Poona

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Exoelectron emission was observed from previously light soaked, glow discharge prepared a-Si:H films by thermal stimulation. The energy analysis of exoelectrons was incorporated by a 127°cylindrical deflection analyzer (CDA). Observed energies of exoelectrons (4-8 eV) suggest that the delocalized electron gains energy during emission either from the Coulomb potential or from the exchange of energy from dangling bond annihilation. Several models of dangling bond creation are discussed; however, the actual mechanism appears to be more complex.

引用

收藏

页码：1528 / 1530

页数：3

相关论文

共 27 条

[1] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON [J].

ADLER, D .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :3-14

[2] THERMALLY STIMULATED EXOELECTRON EMISSION OF NAF - ELECTRON-BOMBARDMENT AND EXOELECTRON ENERGY INVESTIGATIONS [J].

BRUNSMANN, U ;

SCHARMANN, A .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 43 (02) :519-528

[3] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J].

COHEN, JD ;

HARBISON, JP ;

WECHT, KW .

PHYSICAL REVIEW LETTERS, 1982, 48 (02) :109-112

[4] DEEP ELECTRON TRAPS IN HYDROGENATED AMORPHOUS-SILICON [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1981, 24 (12) :7457-7459

[5] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[6]

ELLIOT SR, 1979, PHILOS MAG, V239, P349

[7]

GORECKI T, 1985, JPN J APPL PHYS, V24, P127

[8]

GRUNEWALD M, 1981, J PHYS-PARIS, V42, P523

[9] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON [J].

HIRABAYASHI, I ;

MORIGAKI, K ;

NITTA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L357-L360

[10] ON THE MECHANISMS OF EXOELECTRON EMISSION FROM ALKALI-HALIDES X-IRRADIATED AT LOW-TEMPERATURES [J].

KAMADA, M ;

TSUTSUMI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 :15-20