REDUCTION OF RECOMBINATION-ENHANCED DIFFUSION OF BE IN INGAAS STRAINED LAYER

被引：9

作者：

UEMATSU, M

WADA, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.107579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InGaAs strained layer introduced into the p-n junction of Esaki tunnel diodes has been found to reduce the current-induced degradation of the diodes, that is, recombination-enhanced impurity diffusion (REID) of Be. The Be REID coefficients for diodes with the InGaAs strained layer are about two orders of magnitude smaller than those without the strained layer. This suggests that the strained layer reduces the recombination-enhanced process, which is consistent with the results for InGaAs strained-layer lasers.

引用

收藏

页码：1322 / 1323

页数：2

相关论文

共 11 条

[1] HIGH-POWER, HIGH-TEMPERATURE OPERATION OF ALINGAAS-ALGAAS STRAINED SINGLE-QUANTUM-WELL DIODE-LASERS [J].

CHOI, HK ;

WANG, CA ;

KOLESAR, DF ;

AGGARWAL, RL ;

WALPOLE, JN .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (10) :857-859

[2] PERMANENT DEGRADATION OF GAAS TUNNEL DIODES [J].

GOLD, RD ;

WEISBERG, LR .

SOLID-STATE ELECTRONICS, 1964, 7 (11) :811-821

[3] DEGRADATION AND PASSIVATION OF GAP LIGHT-EMITTING DIODES [J].

HARTMAN, RL ;

SCHWARTZ, B ;

KUHN, M .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :304-&

[4] RECOMBINATION ENHANCED DEFECT REACTIONS [J].

KIMERLING, LC .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1391-1401

[5] PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].

KRESSEL, H ;

BYER, NE .

PROCEEDINGS OF THE IEEE, 1969, 57 (01) :25-&

[6] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].

LONGINI, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :127-130

[7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[8]

NAKAJIMA O, 1990, 1990 INT EL DEV M SA, P673

[9] STABLE OPERATION (OVER 5000-H) OF HIGH-POWER 0.98-MUM INGAAS GAAS STRAINED QUANTUM-WELL RIDGE WAVE-GUIDE LASERS FOR PUMPING ER3+-DOPED FIBER AMPLIFIERS [J].

OKAYASU, M ;

FUKUDA, M ;

TAKESHITA, T ;

UEHARA, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (10) :689-691

[10] RECOMBINATION-ENHANCED IMPURITY DIFFUSION IN BE-DOPED GAAS [J].

UEMATSU, M ;

WADA, K .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :2015-2017