SOLID-STATE EPITAXY OF OSMIUM SILICIDE ON SI-111 UNDER REDUCING ATMOSPHERE

被引：9

作者：

CHANG, YS

CHOU, ML

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344185

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3011 / 3013

页数：3

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共 9 条

[1] PHASE FORMATION AND IDENTIFICATION OF AN EPITAXIAL FE-NI ALLOY SILICIDE
CHANG, YS
HSIEH, IJ
CHEN, H
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 154 - 157
[2] THE STRUCTURE IDENTIFICATION OF EPITAXIAL RU2SI3 ON (111) SI
CHANG, YS
CHU, JJ
[J]. MATERIALS LETTERS, 1987, 5 (03) : 67 - 71
[3] EFFECTS OF BACKSPUTTERING AND AMORPHOUS-SILICON CAPPING LAYER ON THE FORMATION OF TISI2 IN SPUTTERED TI FILMS ON (001)SI BY RAPID THERMAL ANNEALING
CHEN, LJ
WU, IW
CHU, JJ
NIEH, CW
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2778 - 2782
[4] KINETICS OF PD2SI LAYER GROWTH MEASURED BY AN X-RAY-DIFFRACTION TECHNIQUE
COULMAN, B
CHEN, H
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3467 - 3474
[5] GRIFFITH WP, 1967, CHEM RARER PLATINUM, P8
[6] LOW EARTH ORBIT ENVIRONMENTAL-EFFECTS ON OSMIUM AND RELATED OPTICAL THIN-FILM COATINGS
GULL, TR
HERZIG, H
OSANTOWSKI, JF
TOFT, AR
[J]. APPLIED OPTICS, 1985, 24 (16): : 2660 - 2665
[7] LIER M, 1985, PHYS REV LETT, V54, P2139
[8] SILICIDES OF RUTHENIUM AND OSMIUM - THIN-FILM REACTIONS, DIFFUSION, NUCLEATION, AND STABILITY
PETERSSON, CS
BAGLIN, JEE
DEMPSEY, JJ
DHEURLE, FM
LAPLACA, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4866 - 4883
[9] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES
TUNG, RT
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (06) : 461 - 464