REDUCTION IN CRYSTALLOGRAPHIC SURFACE-DEFECTS AND STRAIN IN 0.2-MU-M-THICK SILICON-ON-SAPPHIRE FILMS BY REPETITIVE IMPLANTATION AND SOLID-PHASE EPITAXY

被引：10

作者：

GOLECKI, I

GLASS, HL

KINOSHITA, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93222

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：670 / 672

页数：3

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共 5 条

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