THEORY OF THERMAL-BEHAVIOR OF LASER OPERATION IN IN0.53GA0.47AS

被引:15
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TAKESHIMA, M
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10.1063/1.333763
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O59 [应用物理学];
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页码:49 / 56
页数:8
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共 39 条
[1]   THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].
ADAMS, AR ;
ASADA, M ;
SUEMATSU, Y ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624
[2]   THE EFFECTS OF LOSS AND NONRADIATIVE RECOMBINATION ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN 1.5-1.6-MU-M GALNASP/INP LASERS [J].
ASADA, M ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :917-923
[3]   THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].
ASADA, M ;
ADAMS, AR ;
STUBKJAER, KE ;
SUEMATSU, Y ;
ITAYA, Y ;
ARAI, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619
[4]   MEASUREMENT OF SPONTANEOUS EMISSION EFFICIENCY AND NONRADIATIVE RECOMBINATIONS IN 1.58-MU-M WAVELENGTH GAINASP-INP CRYSTALS [J].
ASADA, M ;
SUEMATSU, Y .
APPLIED PHYSICS LETTERS, 1982, 41 (04) :353-355
[5]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P175
[6]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[7]  
DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[8]   GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) :44-49
[9]   A COMPARISON OF TEMPERATURE-DEPENDENCE OF LASING CHARACTERISTICS OF 1.3 MU-M INGAASP AND GAAS DH LASERS [J].
DUTTA, NK ;
NELSON, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1222-1223
[10]   THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].
DUTTA, NK ;
NELSON, RJ .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92