EVIDENCE OF STRESS-MEDIATED HG MIGRATION IN HG1-XCDXTE

被引：32

作者：

RACCAH, PM

LEE, U

SILBERMAN, JA

SPICER, WE

WILSON, JA

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

[2] SANTA BARBARA RES CTR,GOLETA,CA 93017

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 04期

关键词：

D O I：

10.1063/1.93944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：374 / 376

页数：3

共 10 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[2] LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION [J].

ASPNES, DE .

PHYSICAL REVIEW LETTERS, 1972, 28 (14) :913-&

[3] ELECTROREFLECTANCE OF ION-IMPLANTED GAAS [J].

BROWN, RL ;

SCHOONVELD, L ;

ABELS, LL ;

SUNDARAM, S ;

RACCAH, PM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2950-2957

[4]

KAVALYAUSKAS YF, 1979, SOV PHYS SEMICOND+, V13, P671

[5] ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE EFFECTS OF ANODIZATION AND OF CHEMOMECHANICAL POLISH ON HG1-XCDXTE [J].

LASTRASMARTINEZ, A ;

LEE, U ;

ZEHNDER, J ;

RACCAH, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :157-160

[6] QUASI-SIMULTANEOUS SIMS, AES, XPS, AND TDMS STUDY OF PREFERENTIAL SPUTTERING, DIFFUSION, AND MERCURY EVAPORATION IN CDXHG1-XTE [J].

NITZ, HM ;

GANSCHOW, O ;

KAISER, U ;

WIEDMANN, L ;

BENNINGHOVEN, A .

SURFACE SCIENCE, 1981, 104 (2-3) :365-383

[7] CHEMISORPTION AND OXIDATION STUDIES OF (110) SURFACES OF GAAS, GASB, AND INP [J].

PIANETTA, P ;

LINDAU, I ;

GARNER, CM ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (06) :2792-2806

[8] ROOM-TEMPERATURE STABILITY OF CLEAVED HG1-XCDXTE [J].

SILBERMAN, JA ;

MORGEN, P ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :154-156

[9]

Spicer W. E., 1980, Journal of the Physical Society of Japan, V49, P1079

[10]

TACHI S, 1979, J APPL PHYS, V50, P546

← 1 →