ON THE PREFERENTIAL ETCHING OF GAAS BY H2SO4-H2O2-H2O

被引：36

作者：

MACFADYEN, DN ^{[1
]}

机构：

[1] UNIV GLASGOW, DEPT ELECTR & ELECT ENGN, GLASGOW G12 8QQ, SCOTLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 09期

关键词：

D O I：

10.1149/1.2120126

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1934 / 1941

页数：8

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