2-PARAMETER MODEL FOR PREDICTING SEU RATE

被引：16

作者：

MIROSHKIN, VV

TVERSKOY, MG

机构：

[1] Petersburg Nuclear Physics Institute, Gatchina, Leningrad district

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two parameter model (volume and threshold energy) for describing Single Event Upsets rate in memory devices is proposed. The method of evaluation of these parameters is discussed. It is shown that there is a good agreement between experimental and calculated data.

引用

收藏

页码：2085 / 2092

页数：8

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