COMPARISON OF SOFT ERRORS INDUCED BY HEAVY-IONS AND PROTONS

被引：29

作者：

BISGROVE, JM

LYNCH, JE

MCNULTY, PJ

ABDELKADER, WG

KLETNIEKS, V

KOLASINSKI, WA

机构：

[1] CLARKSON UNIV,CTR EDUC RESOURCE,POTSDAM,NY 13676

[2] AEROSPACE CORP,SPACE SCI LAB,LOS ANGELES,CA 90009

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1571 / 1576

页数：6

相关论文

共 9 条

[1] BISGROVE JM, UNPUB
[2] CHARGE-DEPOSITION SPECTRA IN THIN SLABS OF SILICON INDUCED BY ENERGETIC PROTONS
ELTELEATY, S
FARRELL, GE
MCNULTY, PJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4394 - 4397
[3] MICRODOSIMETRIC ANALYSIS OF PROTON-INDUCED REACTIONS IN SILICON AND GALLIUM-ARSENIDE
FARRELL, GE
MCNULTY, PJ
ABDELKADER, W
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1073 - 1077
[4] MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON
FARRELL, GE
MCNULTY, PJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 2012 - 2016
[5] METHODS FOR CALCULATING SEU RATES FOR BIPOLAR AND NMOS CIRCUITS
MCNULTY, PJ
ABDELKADER, WG
BISGROVE, JM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4180 - 4184
[6] PROTON-INDUCED NUCLEAR-REACTIONS IN SILICON
MCNULTY, PJ
FARRELL, GE
TUCKER, WP
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4007 - 4012
[7] SUGGESTED SINGLE EVENT UPSET FIGURE OF MERIT
PETERSEN, EL
LANGWORTHY, JB
DIEHL, SE
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4533 - 4539
[8] COSMIC-RAY INDUCED ERRORS IN MOS MEMORY CELLS
PICKEL, JC
BLANDFORD, JT
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1166 - 1171
[9] WHITTELES AA, 1982, IEEE T NUC SCI, V32, P1665