NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN SILICON IMPLANTED WITH OXYGEN

被引：23

作者：

STOEMENOS, J ^{[1
]}

MARGAIL, J ^{[1
]}

机构：

[1] CEN,ETUD & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE

来源：

THIN SOLID FILMS | 1986年 / 135卷 / 01期

关键词：

D O I：

10.1016/0040-6090(86)90094-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：115 / 127

页数：13

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