COMPOSITIONAL PROFILE OF THE AMORPHOUS SILICON/NITRIDE INTERFACE STUDIED WITH RUTHERFORD BACKSCATTERING

被引：7

作者：

ABELSON, JR ^{[1
]}

TSAI, CC ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 14期

关键词：

D O I：

10.1063/1.97514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：850 / 852

页数：3

共 12 条

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[2]

ABELSON JR, 1986, MATERIALS RES SOC S, V69, P275

[3]

CHU WK, 1978, BACKSCATTERING SPECT, pCH1

[4] PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS [J].

IBARAKI, N ;

FRITZSCHE, H .

PHYSICAL REVIEW B, 1984, 30 (10) :5791-5799

[5]

KNIGHTS JC, 1984, PHYSICS HYDROGENATED, V1, P39

[6] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS [J].

SNELL, AJ ;

MACKENZIE, KD ;

SPEAR, WE ;

LECOMBER, PG ;

HUGHES, AJ .

APPLIED PHYSICS, 1981, 24 (04) :357-362

[7] ELECTRONIC STATES AT THE HYDROGENATED AMORPHOUS-SILICON SILICON- NITRIDE INTERFACE [J].

STREET, RA ;

THOMPSON, MJ .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :769-771

[8] HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY AND THE ANALYSIS OF VERY THIN SILICON-NITRIDE LAYERS [J].

TAMMINGA, Y ;

WILLEMSEN, MFC ;

HABRAKEN, FHPM ;

KUIPER, AET .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 200 (2-3) :499-504

[9]

TSAI CC, 1983, J NON-CRYST SOLIDS, V59-6, P731, DOI 10.1016/0022-3093(83)90275-2

[10]

TSAI CC, 1986, MATER RES SOC S P, V70, P351

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