QUANTITATIVE HIGH-RESOLUTION ELECTRON-MICROSCOPY OF III-V COMPOUNDS - A FUZZY-LOGIC APPROACH

In the study of interdiffusion phenomena in layered structures of III-V compounds by high resolution electron microscopy, contrast features in the micrographs can be correlated with the variation of the chemical composition of the crystals. For quantitative interpretation of the micrographs a fuzzy logic approach is adapted to extract chemical information. The linguistic variable ''similarity of images'' is derived from the standard deviation (SD) of their difference patterns, which proved to be an appropriate measure. The approach developed is used to analyze simulated contrast tableaus of GaAs/P (As/P variation) and experimental micrographs of Al/GaAs (Al/Ga variation). (C) 1995 American Institute of Physics.