POST-TRANSIT-TIME ANALYSIS OF TIME-OF-FLIGHT PHOTOCURRENTS

被引：11

作者：

USALA, S

ADRIAENSSENS, GJ

OKTU, O

NESLADEK, M

机构：

[1] K.U. Leuven, Laboratorium voor Vaste-Stof en Hoge-Drukfysika, B-3001 Heverlee

[2] Institute of Physics, Czechoslovak Academy of Sciences, 18040 Praha 8

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90178-M

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is shown how the density of localized gap states in amorphous semiconductors can be deduced from time-of-flight photocurrents on the basis of the trap-limited band transport model, post-transit currents giving information on deep-state densities; and how strong deep-trapping of the photo-induced excess carriers invalidates the analysis. Results from a-Si:H, p-type a-Si:H, a-Si,S:H and a-Si,C:H samples are used to illustrate these points.

引用

页码：265 / 268

页数：4

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