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X-RAY TOPOGRAPHY STUDY OF THE CLEAVED SI-(111)-FACE
被引:8
作者
:
GRONWALD, KD
论文数:
0
引用数:
0
h-index:
0
GRONWALD, KD
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
机构
:
来源
:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
|
1984年
/ 34卷
/ 04期
关键词
:
D O I
:
10.1007/BF00616582
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:253 / 261
页数:9
相关论文
共 19 条
[1]
Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4
[2]
Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397
[3]
LEED FROM SURFACE STEPS ON UO2 SINGLE CRYSTALS
ELLIS, WP
论文数:
0
引用数:
0
h-index:
0
机构:
Los Alamos Scientific Laboratory, University of California, Los Alamos
ELLIS, WP
SCHWOEBEL, RL
论文数:
0
引用数:
0
h-index:
0
机构:
Los Alamos Scientific Laboratory, University of California, Los Alamos
SCHWOEBEL, RL
[J].
SURFACE SCIENCE,
1968,
11
(01)
: 82
-
+
[4]
TRANSMISSION ELECTRON MICROSCOPY OF CLEAVED SILICON
FRANKL, DR
论文数:
0
引用数:
0
h-index:
0
FRANKL, DR
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(12)
: 3514
-
&
[5]
ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN,PHYS INST 2,AACHEN,WEST GERMANY
HENZLER, M
[J].
SURFACE SCIENCE,
1973,
36
(01)
: 109
-
122
[6]
LEED-INVESTIGATION OF STEP ARRAYS ON CLEAVED GERMANIUM (111) SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
[J].
SURFACE SCIENCE,
1970,
19
(01)
: 159
-
&
[7]
HENZLER M, 1976, 8 P C PHYS SEM ROM
[8]
WORK FUNCTION VARIATIONS OF GALLIUM-ARSENIDE CLEAVED SINGLE-CRYSTALS
HUIJSER, A
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
HUIJSER, A
VANLAAR, J
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VANLAAR, J
[J].
SURFACE SCIENCE,
1975,
52
(01)
: 202
-
210
[9]
OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES
KASUPKE, N
论文数:
0
引用数:
0
h-index:
0
KASUPKE, N
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
[J].
SURFACE SCIENCE,
1980,
92
(2-3)
: 407
-
416
[10]
INFLUENCE OF ATOMIC STEPS ON PHOTOELECTRIC PROPERTIES OF CLEAN CLEAVED SILICON AS DERIVED FROM SURFACE PHOTOVOLTAGE
KUHLMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV HANNOVER,INST EXPTL PHYS B,D-3000 HANNOVER 1,FED REP GER
TECH UNIV HANNOVER,INST EXPTL PHYS B,D-3000 HANNOVER 1,FED REP GER
KUHLMANN, W
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV HANNOVER,INST EXPTL PHYS B,D-3000 HANNOVER 1,FED REP GER
TECH UNIV HANNOVER,INST EXPTL PHYS B,D-3000 HANNOVER 1,FED REP GER
HENZLER, M
[J].
SURFACE SCIENCE,
1977,
69
(02)
: 533
-
546
←
1
2
→
共 19 条
[1]
Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4
[2]
Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397
[3]
LEED FROM SURFACE STEPS ON UO2 SINGLE CRYSTALS
ELLIS, WP
论文数:
0
引用数:
0
h-index:
0
机构:
Los Alamos Scientific Laboratory, University of California, Los Alamos
ELLIS, WP
SCHWOEBEL, RL
论文数:
0
引用数:
0
h-index:
0
机构:
Los Alamos Scientific Laboratory, University of California, Los Alamos
SCHWOEBEL, RL
[J].
SURFACE SCIENCE,
1968,
11
(01)
: 82
-
+
[4]
TRANSMISSION ELECTRON MICROSCOPY OF CLEAVED SILICON
FRANKL, DR
论文数:
0
引用数:
0
h-index:
0
FRANKL, DR
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(12)
: 3514
-
&
[5]
ROUGHNESS OF CLEAVED SEMICONDUCTOR SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
TH AACHEN,PHYS INST 2,AACHEN,WEST GERMANY
HENZLER, M
[J].
SURFACE SCIENCE,
1973,
36
(01)
: 109
-
122
[6]
LEED-INVESTIGATION OF STEP ARRAYS ON CLEAVED GERMANIUM (111) SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
[J].
SURFACE SCIENCE,
1970,
19
(01)
: 159
-
&
[7]
HENZLER M, 1976, 8 P C PHYS SEM ROM
[8]
WORK FUNCTION VARIATIONS OF GALLIUM-ARSENIDE CLEAVED SINGLE-CRYSTALS
HUIJSER, A
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
HUIJSER, A
VANLAAR, J
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
VANLAAR, J
[J].
SURFACE SCIENCE,
1975,
52
(01)
: 202
-
210
[9]
OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES
KASUPKE, N
论文数:
0
引用数:
0
h-index:
0
KASUPKE, N
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
[J].
SURFACE SCIENCE,
1980,
92
(2-3)
: 407
-
416
[10]
INFLUENCE OF ATOMIC STEPS ON PHOTOELECTRIC PROPERTIES OF CLEAN CLEAVED SILICON AS DERIVED FROM SURFACE PHOTOVOLTAGE
KUHLMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV HANNOVER,INST EXPTL PHYS B,D-3000 HANNOVER 1,FED REP GER
TECH UNIV HANNOVER,INST EXPTL PHYS B,D-3000 HANNOVER 1,FED REP GER
KUHLMANN, W
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
TECH UNIV HANNOVER,INST EXPTL PHYS B,D-3000 HANNOVER 1,FED REP GER
TECH UNIV HANNOVER,INST EXPTL PHYS B,D-3000 HANNOVER 1,FED REP GER
HENZLER, M
[J].
SURFACE SCIENCE,
1977,
69
(02)
: 533
-
546
←
1
2
→